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| TCST1230 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Applications D Position sensor for shaft encoder D Detection of opaque material such as paper, IBM cards, magnetic tapes etc. D Limit switch for mechanical motions in VCR D Read/ write head position in data storage equipment 15130 D General purpose - wherever the space is limited 96 11969 Features D Gap 3 mm D Package height: 6 mm D Aperture 0.5 mm D Plastic polycarbonate housing D Current Transfer Ratio (CTR) of typical 5% A E C C Top view Order Instruction Ordering Code TCST1230 Resolution (mm) / Aperture (mm) 0.4 / 0.5 Remarks High density packing Document Number 83765 Rev. A4, 08-Jun-99 www.vishay.com 1 (7) TCST1230 Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW C tp 10 mA Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 70 7 100 150 100 Unit V V mA mW C Tamb 25C Coupler Parameter Total power dissipation Operation temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 250 -25 to +85 -40 to +100 260 Unit mW C C C 1.6 mm from case, t 5 s Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF Output (Detector) Parameter Collector emittter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 10 mA VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA 10 100 Coupler Parameter Collector current Collector emitter saturation voltage Test Conditions VCE = 10 V, IF = 20 mA IF = 20 mA, IC = 0.2 mA Symbol IC VCEsat Min. 0.5 Typ. Max. 14 0.4 Unit mA V www.vishay.com 2 (7) Document Number 83765 Rev. A4, 08-Jun-99 TCST1230 Vishay Semiconductors Switching Characteristics Parameter Turn-on time Turn-off time Test Conditions IC = 1 mA, VCE = 5 V, RL = 100 ( (see figure 1) g ) W Symbol ton toff Typ. 15.0 10.0 Unit ms ms 0 IF IF +5V IC = 2 mA; adjusted through input amplitude IF 96 11698 RG = 50 tp = 0.01 T tp = 50 W 0 tp IC Channel I Oscilloscope RL 1 MW t ms Channel II 50 95 10890 W 100 W y CL x 20 pF 100% 90% Figure 1. Test circuit 10% 0 tr td ton tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) tf t storage time fall time turn-off time Figure 2. Switching times Document Number 83765 Rev. A4, 08-Jun-99 www.vishay.com 3 (7) TCST1230 Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 400 P tot - Total Power Dissipation ( mW ) 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=25V IF=0 300 Coupled device 200 Phototransistor 100 IR-diode 1000 100 10 0 0 95 11088 1 30 60 90 120 150 95 11090 0 25 50 75 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 3. Total Power Dissipation vs. Ambient Temperature 1000.0 Figure 6. Collector Dark Current vs. Ambient Temperature 10 VCE=5V IC - Collector Current ( mA ) I F - Forward Current ( mA ) 100.0 1 10.0 0.1 1.0 0.01 0.1 0 96 11862 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 95 11083 0.1 1 10 100 IF - Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 2.0 Figure 7. Collector Current vs. Forward Current 10 IC - Collector Current ( mA ) VCE=5V IF=20mA 1.5 IF=50mA 1 20mA 1.0 10mA 0.1 5mA 2mA 0.5 0 -25 95 11089 0.01 0 25 50 75 100 95 11084 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 (7) Figure 8. Collector Current vs. Collector Emitter Voltage Document Number 83765 Rev. A4, 08-Jun-99 TCST1230 Vishay Semiconductors 100 CTR - Current Transfer Ratio ( % ) I Crel - Relative Collector Current VCE=5V 110 100 90 80 70 60 50 40 30 20 10 0 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 0.1 0.2 0.3 0.4 0.5 96 12006 0 A=0.5mm 10 s 1 0.1 0.1 95 11085 1 10 100 IF - Forward Current ( mA ) s - Displacement ( mm ) Figure 9. Current Transfer Ratio vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 20 Non Saturated Operation VS=5V RL=100W Figure 11. Relative Collector Current vs. Displacement 15 10 ton 5 toff 0 0 2 4 6 8 10 95 11086 IC - Collector Current ( mA ) Figure 10. Turn on / off Time vs. Collector Current Document Number 83765 Rev. A4, 08-Jun-99 www.vishay.com 5 (7) TCST1230 Vishay Semiconductors Dimensions of TCST1230 in mm 96 12083 www.vishay.com 6 (7) Document Number 83765 Rev. A4, 08-Jun-99 TCST1230 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83765 Rev. A4, 08-Jun-99 www.vishay.com 7 (7) |
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